EPC2001C
Active - GANFET N-CH 100V 36A DIE OUTLINE
Beschrijving:
GANFET N-CH 100V 36A DIE OUTLINE
EPC2001C Specificatie
Product Kenmerk
Kenmerk Waarde
Verpakking
Tape & Reel (TR)
Technology
GaNFET (Gallium Nitride)
Drain to Source Voltage (Vdss)
100 V
Current - Continuous Drain (Id) @ 25℃
36A (Ta)
Drive Voltage (Max Rds On, Min Rds On)
5V
Rds On (Max) @ Id, Vgs
7mOhm @ 25A, 5V
Vgs(th) (Max) @ Id
2.5V @ 5mA
Gate Charge (Qg) (Max) @ Vgs
9 nC @ 5 V
Input Capacitance (Ciss) (Max) @ Vds
900 pF @ 50 V
Power Dissipation (Max)
-
Operating Temperature
-40 ℃ ~ 150 ℃ (TJ)
Mounting Type
Surface Mount
Supplier Device Package
Die
Poland
